IMBD4448 vishay semiconductors formerly general semiconductor document number 88204 www.vishay.com 14-may-02 1 small-signal diode maximum ratings and thermal characteristics (t a = 25? unless otherwise noted) parameter symbol value unit reverse voltage v r 75 v peak reverse voltage v rm 100 v rectified current (average) half wave rectification with i f(av) 150 (1) ma resist. load at t amb = 25 c and f 50hz surge forward current at t < 1s and t j = 25 c i fsm 500 ma power dissipation up to t amb = 25 cp tot 350 (1) mw thermal resistance junction to ambient air r ja 450 (1) c/w junction temperature t j 150 c storage temperature range t s 65 to +150 c note: (1) device on fiberglass substrate, see layout on next page. .016 (0.4) .056 (1.43 ) .037(0.95) .037(0.95) max. .004 (0.1) .122 (3.1) .016 (0.4) .016 (0.4) 1 2 3 top view .102 (2.6) .007 (0.175) .045 (1.15) .110 (2.8) .052 (1.33 ) .005 (0.125) .094 (2.4) .037 (0.95) features silicon epitaxial planar diodes fast switching diode in case sot-23, especially suited for automatic insertion. this diodes are also available in other case styles including: the do-35 case with the type designation 1n4448, the mini-melf case with the type designation ll4448, and the sod-123 case with the type designation 1n4448w. mechanical data case: sot-23 plastic package weight: approx. 0.008g packaging codes/options: e8/10k per 13 reel (8mm tape), 30k/box e9/3k per 7 reel (8mm tape), 30k/box to-236ab (sot-23) dimensions in inches and (millimeters) mounting pad layout 0.079 (2.0) 0.037 (0.95) 0.035 (0.9) 0.031 (0.8) 0.037 (0.95) marking a3 top view
IMBD4448 vishay semiconductors formerly general semiconductor www.vishay.com document number 88204 2 14-may-02 electrical characteristics (t j = 25 ? c unless otherwise noted) parameter symbol test condition min typ max unit forward voltage v f i f = 5ma 0.62 ? 0.72 v i f = 100ma ?? 1.0 v v r = 70v ?? 2.5 a leakage current i r v r = 70v, t j = 150 ? c ?? 50 a v r = 25v, t j = 150 ? c ?? 30 a capacitance c tot v f = v r = 0, f = 1mhz ?? 4pf reverse recovery time t rr i f = 10ma, i r = 10ma ?? 4ns v r =6v, r l = 100 (1)device on fiberglass substrate, see layout (sot-23). 0.59 (15) 0.2 (5) 0.03 (0.8) 0.30 (7.5) 0.12 (3) .04 (1) 0.06 (1.5) 0.20 (5.1) .08 (2) .08 (2) .04 (1) 0.47 (12) dimensions in inches (millimeters) layout for r thja test thickness: fiberglass 0.059 in. (1.5 mm) copper leads 0.012 in. (0.3 mm)
IMBD4448 vishay semiconductors formerly general semiconductor document number 88204 www.vishay.com 14-may-02 3 ratings and characteristic curves (t a = 25 ? c unless otherwise noted)
IMBD4448 vishay semiconductors formerly general semiconductor www.vishay.com document number 88204 4 14-may-02 ratings and characteristic curves (t a = 25 ? c unless otherwise noted)
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